Mounting Style
: SMD/SMT
Package / Case
: SO-8
Packaging
: Reel
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Configuration
: Single Quad Drain Triple Source
Drain-Source Breakdown Voltage
: - 30 V
Resistance Drain-Source RDS (on)
: 0.08 Ohms
Gate-Source Breakdown Voltage
: +/- 16 V
Continuous Drain Current
: 5 A
Application BATTERY MANAGMENT IN NOMADIC EQUIPMENT
POWER MANAGMENT IN CELLULAR PHONESPinout
Specifications
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25
Single Operation
Drain Current (continuous) at Tc = 100
Single Operation
|
5
3 |
A
A |
|
IDM(`) |
Drain Current (pulsed) |
20 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
2.5 |
W |
(*)Value limited by wires bonding (l) Pulse width limited by safe operating area
DescriptionThis Power MOSFET STS5PF30L is the second generation of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.
Parameters: | Technical/Catalog Information | STS5PF30L |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 2.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1350pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 16nC @ 5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STS5PF30L
STS5PF30L
497 3231 2 ND
49732312ND
497-3231-2
|
STS5PF30L Data Sheet
