STS9D8NH3LL

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 8 A at Q1, 9 A at Q2
Resistance Drain-Source RDS (on) : 22 mOhms at Q1, 15 mOhms at Q2
Package / Case : SO N


Features:

Optimal R_DS(on) x Qg trade-off @ 4.5V
Conduction losses reduced
Switching losses reduced


Application

Switching applications


Specifications

Symbol	Parameter	Type	Value	Unit
VDS	Drain-source voltage (vGS = 0)	Q1 Q2	30 30	V V
VGS	Gate- source voltage	Q1 Q2	±16 ±16	V V
ID	Drain current (continuous) at TC = 25°C	Q1 Q2	8 9	A A
ID	Drain current (continuous) at TC = 100°C	Q1 Q2	5 6.3	A A
IDM(1)	Drain current (pulsed)	Q1 Q2	32 36	A A
PTOT	Total dissipation at TC = 25°C	Q1 Q2	2 2	W W
EAS(2)	Single pulse avalanche energy		150	mJ

Description

This STS9D8NH3LL uses the latest advanced design rules of ST's STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters.

Parameters:

Technical/Catalog Information	STS9D8NH3LL
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	22 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	857pF @ 25V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS9D8NH3LL STS9D8NH3LL 497 6030 2 ND 49760302ND 497-6030-2