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STSJ2NM60

ApplicationThe MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.PinoutSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR ...

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SeekIC No. : 004508813 Detail

STSJ2NM60: ApplicationThe MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.PinoutSpecifications Sym...

STSJ2NM60 Data Sheet

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Part Number:
STSJ2NM60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain- gate Voltage (RGS = 20 k)
600
V
VGS
Gate-Source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TA = 25°C (1)
Drain Current (continuous) at TC = 100°C
2
0.37
1.26
A
A
A
IDM(2)
Drain Current (pulsed)
8
A
PTOT
PTOT
Total Dissipation at TC = 25°C
Total Dissipation at TA = 25°C (1)
70
3
W
W
Derating Factor(1)
0.02
W/
dv/dt(3)
Peak Diode Recovery voltage slope
15
V/ns
Tstg
Storage Temperature
65 to 150
Tj
Max. Operating Junction Temperature



Description

The MDmesh™ STSJ2NM60 is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition's products.




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