MFG:ST Package Cooled:SOP8 D/C:08+
MFG: ST
Package Cooled: SOP8
D/C: 08+
Description: The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process ...
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition's products.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
500 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
500 |
V |
|
VGS |
Gate-Source Voltage |
± 30 |
V |
|
ID |
Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TA = 25°C (1) Drain Current (continuous) at TC = 100°C |
3 0.63 1.89 |
A A A |
|
IDM(2) |
Drain Current (pulsed) |
12 |
A |
|
PTOT PTOT |
Total Dissipation at TC = 25°C Total Dissipation at TA = 25°C (1) |
70 3 |
W W |
|
Derating Factor(1) |
0.02 |
W/ | |
|
dv/dt(3) |
Peak Diode Recovery voltage slope |
15 |
V/ns |
|
Tstg |
Storage Temperature |
65 to 150 |
|
|
Tj |
Max. Operating Junction Temperature |
STSJ3NM50
PDF/DataSheet Download
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