STSJ60NH3LL

MOSFET N Ch 30V 0.004 Ohm 15A Pwr

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SeekIC No. : 00161524 Detail

STSJ60NH3LL: MOSFET N Ch 30V 0.004 Ohm 15A Pwr

floor Price/Ceiling Price

Part Number:
STSJ60NH3LL
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.0057 Ohms Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : PowerPAK SO-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : PowerPAK SO-8
Continuous Drain Current : 60 A
Configuration : Single Quad Drain
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.0057 Ohms


Features:

· Optimal RDS(on) x Qg trade-off @ 4.5 V
· Conduction losses reduced
· Improved junction-case thermal resistance
· Low threshold device



Application

·Switching application


Specifications

Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate- source voltage ± 16 V
ID(1) Drain current (continuous) at TC = 25 60 A
ID Drain current (continuous) at TC = 100 37.5 A
ID(2) Drain current (continuous) at TC = 25 15 A
ID Drain current (continuous) at TC = 100 9.4 A
IDM(3) Drain current (pulsed) 60 A
Ptot(1) Total dissipation at TC = 25 50 W
Ptot(2) Total dissipation at TC = 25 3 W
Tstg Storage temperature -55 to 150  
Tj Operating junction temperature
1. This value is rated according to Rthj-c
2. This value is rated according to Rthj-pcb
3. Pulse width limited by safe operating area



Description

This STSJ60NH3LL  utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capability.




Parameters:

Technical/Catalog InformationSTSJ60NH3LL
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs5.7 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds 1810pF @ 25V
Power - Max3W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs24nC @ 4.5V
Package / Case8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STSJ60NH3LL
STSJ60NH3LL
497 5252 2 ND
49752522ND
497-5252-2



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