MOSFET N Ch 30V 0.004 Ohm 15A Pwr
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 60 A | ||
Resistance Drain-Source RDS (on) : | 0.0057 Ohms | Configuration : | Single Quad Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | PowerPAK SO-8 | Packaging : | Reel |
Symbol | Parameter | Value | Unit |
VDS | Drain-source voltage (VGS = 0) | 30 | V |
VGS | Gate- source voltage | ± 16 | V |
ID(1) | Drain current (continuous) at TC = 25 | 60 | A |
ID | Drain current (continuous) at TC = 100 | 37.5 | A |
ID(2) | Drain current (continuous) at TC = 25 | 15 | A |
ID | Drain current (continuous) at TC = 100 | 9.4 | A |
IDM(3) | Drain current (pulsed) | 60 | A |
Ptot(1) | Total dissipation at TC = 25 | 50 | W |
Ptot(2) | Total dissipation at TC = 25 | 3 | W |
Tstg | Storage temperature | -55 to 150 | |
Tj | Operating junction temperature |
This STSJ60NH3LL utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capability.
Technical/Catalog Information | STSJ60NH3LL |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 15A |
Rds On (Max) @ Id, Vgs | 5.7 mOhm @ 7.5A, 10V |
Input Capacitance (Ciss) @ Vds | 1810pF @ 25V |
Power - Max | 3W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 24nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STSJ60NH3LL STSJ60NH3LL 497 5252 2 ND 49752522ND 497-5252-2 |