MFG:ST Package Cooled:SOP-8 D/C:09+
MFG: ST
Package Cooled: SOP-8
D/C: 09+
Description: This device utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. ...
This device utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capability.
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source voltage (VGS = 0) | 30 | V |
| VGS | Gate- source voltage | ± 16 | V |
| ID(1) | Drain current (continuous) at TC = 25 | 60 | A |
| ID | Drain current (continuous) at TC = 100 | 37.5 | A |
| ID(2) | Drain current (continuous) at TC = 25 | 15 | A |
| ID | Drain current (continuous) at TC = 100 | 9.4 | A |
| IDM(3) | Drain current (pulsed) | 60 | A |
| Ptot(1) | Total dissipation at TC = 25 | 50 | W |
| Ptot(2) | Total dissipation at TC = 25 | 3 | W |
| Tstg | Storage temperature | -55 to 150 | |
| Tj | Operating junction temperature |
STS01DTP06
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MOSFET N-CH 30V 12A 8-PWRSOIC
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