STT5NF20V

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Quad Drain
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 0.03 Ohms
Package / Case : SOT-23-6


Application

· DC MOTOR DRIVE
·DC-DC CONVERTERS
· BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
·POWER MANAGEMENT IN PORTABLE/DESKTOP PCs


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	20	V
VDGR	Drain- gate Voltage (RGS = 20 k)	20	V
VGS	Gate-Source Voltage	± 12	V
ID	Drain Current (continuous) at Tc = 25	5	A
ID	Drain Current (continuous) at Tc = 100	3	A
IDM(`)	Drain Current (pulsed)	20	A
PTOT	Total Dissipation at Tc = 25	1.6	W

(•)Pulse width limited by safe operating area


Description

This Power MOSFET STT5NF20V is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.