STT5NF30L

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 4 A
Configuration : Single Quad Drain
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.039 Ohms
Package / Case : SOT-23-6


Features:

` TYPICAL R<sub>DS</sub>(on) = 0.039 @10V
` LOW  Q_g
`LOW THRESHOLD DRIVE


Application

· DC-DC CONVERTERS
· POWER MANAGEMENT IN PORTABLE/ DESKTOP PCs
· SYNCHRONOUS RECTIFICATION
· DC MOTOR CONTROL (DISK DRIVERS, etc)


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain-gate Voltage (RGS = 20 k)	30	V
VGS	Gate- source Voltage	± 16	V
ID	Drain Current (continuos) at TC = 25	4	A
ID	Drain Current (continuos) at TC = 100	2.5	A
IDM (`)	Drain Current (pulsed)	16	A
Ptot	Total Dissipation at TC = 25	1.6	W
EAS (1)	Single Pulse Avalanche Energy	50	mJ

(`) Pulse width limited by safe operating area.
(1) Starting T_j =25, I_d = 2 A, V_DD = 15V.


Description

This Power MOSFET STT5NF30L is the second generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.