MOSFET P-Ch, 20V-0.065ohms 5A
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 5 A | ||
Resistance Drain-Source RDS (on) : | 80 mOhms at 4.5 V | Configuration : | Single Quad Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23-6 | Packaging : | Reel |
Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
20 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
20 |
V |
VGS |
Gate-Source Voltage |
± 8 |
V |
ID |
Drain Current (continuous) at Tc = 25 |
5 |
A |
ID |
Drain Current (continuous) at Tc = 100 |
3.1 |
A |
IDM(`) |
Drain Current (pulsed) |
20 |
A |
PTOT |
Total Dissipation at Tc = 25 |
1.6 |
W |
This Power MOSFET STT5PF20V is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance.
Technical/Catalog Information | STT5PF20V |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 5A |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 2.5A, 4.5V |
Input Capacitance (Ciss) @ Vds | 412pF @ 15V |
Power - Max | 1.6W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 4.5nC @ 2.5V |
Package / Case | SOT-23-6 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STT5PF20V STT5PF20V |