Features: TYPE VDSS RDS(on) ID STU9NA60 600 V < 0.8 9 A`TYPICAL RDS(on) = 0.68 ` EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP` ± 30V GATE TO SOURCE VOLTAGE RATING` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` REDUCED THRESHOLD VOLTAGE SPREADApplication· HIGH CURRE...
STU9NA60: Features: TYPE VDSS RDS(on) ID STU9NA60 600 V < 0.8 9 A`TYPICAL RDS(on) = 0.68 ` EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP` ± 30V GATE TO SOURCE VOLTAGE RATING` 1...
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|
TYPE |
VDSS |
RDS(on) |
ID |
| STU9NA60 |
600 V |
< 0.8 |
9 A |
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-sourceVoltage(VGS =0) |
600 |
V |
|
VDGR |
Drain-gateVoltage(RGS =20k) |
600 |
V |
|
VGS |
Gate-sourceVoltage |
±30 |
V |
|
ID |
DrainCurrent(continuous)atTc =25 |
9 |
A |
|
ID |
Drain Current(continuous)atTc =100 |
5.7 |
A |
|
IDM(`) |
Drain Current(pulsed) |
36 |
A |
|
Ptot |
Total DissipationatTC =25 |
145 |
W |
| Derating Factor |
1.16 |
W/ | |
|
Tstg |
Storage Temperature |
-65 to1 50 |
|
|
Tj |
Max.Operating Junction Temperature |
150 |
The Max220TM package STU9NA60 is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the STU9NA60 ideal to reduce compon nt count in multiple paralleled TO-220 designs and save board space with respect to larger packages.