MFG:ST Package Cooled:MAX220 D/C:00+
MFG: ST
Package Cooled: MAX220
D/C: 00+
Description: Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced famil...
Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
|
Symbol |
Parameter |
Value |
Units |
|
VDSS |
Drain-Source Voltage |
800 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
800 |
V |
|
VGS |
Gate-source Voltage |
±30 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
9 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
5.6 |
A |
|
IDM(•) |
Drain Current (pulsed) |
36 |
A |
|
Ptot |
Total Dissipation at Tc = 25 |
160 |
W |
| Derat ing Factor |
1.28 |
W/ | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4 |
V/ns |
|
Ts tg |
Storage Temperature |
-65 to +150 |
|
|
Tj |
Max. Operating Junction Temperature |
150 |
|
TYPE |
VDSS |
RDS(on) |
ID |
| STU9NB80 |
800 V |
<1 |
9 A |
STU9NB80
PDF/DataSheet Download
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