STW10NA50

MOSFET TO-247 N-CH 800V 6A

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STW10NA50 Picture
SeekIC No. : 00166178 Detail

STW10NA50: MOSFET TO-247 N-CH 800V 6A

floor Price/Ceiling Price

Part Number:
STW10NA50
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 9.6 A
Resistance Drain-Source RDS (on) : 0.8 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.8 Ohms
Continuous Drain Current : 9.6 A


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SWITCH MODE POWERSUPPLIES (SMPS)
 DC-AC CONVERTERS FOR WELDING EQUIPMENT AND 
   UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
STW/STH10NA50
STH10NA50FI
VDS
Drain-source Voltage (VGS = 0)
500
V
VDGR
Drain-gate Voltage (RGS = 20 kW)
500
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
9.6
5.6
A
ID
Drain Current (continuos) at TC = 100°C
6.1
3.5
A
IDM ()
Drain Current (pulsed)            38
38
A
PTOT
Total Dissipation at TC = 25°C
150
60
W
Derating Factor
1.2
0.48
W/°C
VISO
Insulation Withstand Voltage (DC)
-
4000
V
Tstg
Storage Temperature
65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C



Description

This series of POWER MOSFETS STW10NA50 represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.




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