STW10NB60

MOSFET N-CH 600V 10A

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SeekIC No. : 00165415 Detail

STW10NB60: MOSFET N-CH 600V 10A

floor Price/Ceiling Price

Part Number:
STW10NB60
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.8 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 10 A
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.8 Ohms


Application

· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE
· HIGH CURRENT, HIGH SPEED SWITCHING



Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

600 V
VDGR

Drain- gate Voltage (RGS = 20 k)

600 V
VGS

Gate-source Voltage

±30 V
ID

Drain Current (continuous) at Tc = 25

10 A
ID

Drain Current (continuous) at Tc = 100

6.2 A
IDM(•)

Drain Current (pulsed)

40 A
PTOT

Total Dissipation at Tc = 25

160 W

Derating Factor

1.28 W/

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ns

Tstg

Storage Temperature

-65 to 150
Tj

Max. Operating Junction Temperature

150
(•) Pulse width limited by safe operating area October 1998                     ( 1) ISD 310A, di/dt 3 200 A/ms, VDD V(BR)DSS, T TJMAX


Description

Using the latest high voltage MESH OVERLAY] process, STMicroelectronics STW10NB60 has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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