Position: Home  > All Categories> Integrated Circuits (ICs) > STW10NC70Z

STW10NC70Z

Application·SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION·WELDING EQUIPMENTSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 700 V VDGR Drain- gate Voltage (RGS = 20 k) 700 V VGS Gate-source Voltage ±25 V ID Dra...

product image

STW10NC70Z Picture
See larger image
SeekIC No. : 004509135 Detail

STW10NC70Z: Application·SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION·WELDING EQUIPMENTSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 700 V ...

STW10NC70Z Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STW10NC70Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/19

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Application

·SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION
·WELDING EQUIPMENT


Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

 700 V
VDGR

Drain- gate Voltage (RGS = 20 k)

 700 V
VGS

Gate-source Voltage

 ±25 V
ID

Drain Current (continuous) at Tc = 25

10.6 A
ID

Drain Current (continuous) at Tc = 100

6.7 A
IDM(•)

Drain Current (pulsed)

 42 A
PTOT

Total Dissipation at Tc = 25

190 W

Derating Factor

 1.51 W/

 IGS

 Gate-source Current (*)

 ±50

 mA

 VESD(G-S)

 Gate source ESD(HBM-C=100pF, R=15K)

 4

 KV

dv/dt(1)

 Peak Diode Recovery voltage slope

3

V/ns

Tstg

Storage Temperature

 -65 to 150
Tj

Max. Operating Junction Temperature

 150
(•)Pulse width limited by safe operating area
(1)ISD 10.6A, di/dt 100A/µs, VDD  V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowed


Description

The STW10NC70Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cables, Wires
821-0814-a
415-0100-150
Circuit Protection
A50QS75-4Y
F-17*77
Kits
IT243
UVSC-110-4E1
Switches
US32DMRJ
HBGQ22P-11ET
Optical Inspection Equipment
AA924
A21K4B
Discrete Semiconductor Products
T508N12TOF
MUR20040
View more