STW11NM80

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Continuous Drain Current : 11 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.4 Ohms


Features:

 ` TYPICAL R<sub>DS(on)</sub> = 0.35
 ` LOW GATE INPUT RESISTANCE
 ` LOW INPUT CAPACITANCE AND GATE CHARGE
 ` BEST R_ds(on) ^* Qg IN THE INDUSTRY


Application

The 800 V MDmesh™ family is very suitable for single switch applications in particular for Flyback and Forward converter topologies. 

Specifications

Symbol	Parameter	Value		Unit
		TO-220/D2PAK TO-247	TO-220FP
VDS	Drain-source Voltage (VGS = 0)	800		V
VDGR	Drain-gate Voltage (RGS = 20 k)	800		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuos) at TC = 25	11	11(*)	A
ID	Drain Current (continuos) at TC = 100	4.7	4.7(*)	A
IDM()	Drain Current (pulsed)	44	44(*)	A
PTOT	Total Dissipation at TC = 25	150	35	W
	Derating Factor	1.2	0.28	W/
dv/dt (1)	Peak Diode Recovery voltage slope	15		V/ns
Tstg	Storage Temperature	65 to 150
Tj	Max. Operating Junction Temperature

()Pulse width limited by safe operating area
(1)I_SD<11A, di/dt<400A/s, V_DD<V_(BR)DSS, T_J<T_JMAX
(*) Limited only by the Maximum Temperature Allowed


Description

The STW11NM80 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.

Parameters:

Technical/Catalog Information	STW11NM80
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	400 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds	1630pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	43.6nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW11NM80 STW11NM80 497 4420 5 ND 49744205ND 497-4420-5