MOSFET Ultra Fast Recovery Diode
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 10 A | ||
Resistance Drain-Source RDS (on) : | 0.41 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit | |
D²PAK/I²PAK TO-220/TO-247 |
TO-220FP | |||
VDS |
Drain-source voltage (VGS=0) |
600 |
V | |
VGS |
Gate-source voltage |
± 25 |
V | |
ID |
Drain current (continuous) at TC = 25 |
10 |
10(1) |
A |
ID |
Drain current (continuous) at TC = 100 |
6.3 |
6.3(1) |
A |
IDM(2) |
Drain current (pulsed) |
40 |
40(1) |
A |
PTOT |
Total dissipation at TC = 25 |
90 |
25 |
A |
dv/dt (3) |
Peak diode recovery voltage slope |
15 |
V/ns | |
VISO |
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25) |
-- |
2500 |
V |
Tj,Tstg |
Operating junction temperature Storage temperature |
-55 to 150 |
This series of devices STW12NM60N implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. STW12NM60N is therefore suitable for the most demanding high efficiency converters.
Technical/Catalog Information | STW12NM60N |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Rds On (Max) @ Id, Vgs | 410 mOhm @ 5A, 10V |
Input Capacitance (Ciss) @ Vds | 960pF @ 50V |
Power - Max | 90W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 30.5nC @ 10V |
Package / Case | TO-247-3 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STW12NM60N STW12NM60N 497 7615 5 ND 49776155ND 497-7615-5 |