STW12NM60N

MOSFET Ultra Fast Recovery Diode

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SeekIC No. : 00161334 Detail

STW12NM60N: MOSFET Ultra Fast Recovery Diode

floor Price/Ceiling Price

Part Number:
STW12NM60N
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/14

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.41 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.41 Ohms
Package / Case : TO-247
Gate-Source Breakdown Voltage : +/- 25 V


Features:

· 100% avalanche tested
· Low input capacitance and gate charge
· Low gate input resistance



Application

· Switching application


Specifications

Symbol
Parameter
Value
Unit
D²PAK/I²PAK
TO-220/TO-247
TO-220FP
VDS
Drain-source voltage (VGS=0)
600
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25
10
10(1)
A
ID
Drain current (continuous) at TC = 100
6.3
6.3(1)
A
IDM(2)
Drain current (pulsed)
40
40(1)
A
PTOT
Total dissipation at TC = 25
90
25
A
dv/dt (3)
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25)
--
2500
V
Tj,Tstg
Operating junction temperature Storage temperature
-55 to 150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 10A, di/dt 400A/s, VDD =80% V(BR)DSS



Description

This series of devices STW12NM60N implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. STW12NM60N is therefore suitable for the most demanding high efficiency converters.




Parameters:

Technical/Catalog InformationSTW12NM60N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs410 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds 960pF @ 50V
Power - Max90W
PackagingTube
Gate Charge (Qg) @ Vgs30.5nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW12NM60N
STW12NM60N
497 7615 5 ND
49776155ND
497-7615-5



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