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STW130NS04ZB

Features: ` TYPICAL RDS(on) = 7 m` 100% AVALANCHE TESTED` LOW CAPACITANCE AND GATE CHARGE` 175°C MAXIMUM JUNCTION TEMPERATUREApplication· HIGH SWITCHING CURRENT· LINEAR APPLICATIONSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) CLAMPED V VDGR...

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SeekIC No. : 004509138 Detail

STW130NS04ZB: Features: ` TYPICAL RDS(on) = 7 m` 100% AVALANCHE TESTED` LOW CAPACITANCE AND GATE CHARGE` 175°C MAXIMUM JUNCTION TEMPERATUREApplication· HIGH SWITCHING CURRENT· LINEAR APPLICATIONSSpecifications ...

STW130NS04ZB Data Sheet

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Part Number:
STW130NS04ZB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

` TYPICAL RDS(on) = 7 m
` 100% AVALANCHE TESTED
` LOW CAPACITANCE AND GATE CHARGE
` 175°C MAXIMUM JUNCTION TEMPERATURE


Application

· HIGH SWITCHING CURRENT
· LINEAR APPLICATIONS


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
CLAMPED
V
VDGR Drain-gate Voltage
CLAMPED
V
VGS Gate- source Voltage
CLAMPED
V
ID Drain Current (continuos) at TC = 25
80
A
ID Drain Current (continuos) at TC = 100
60
A
IDG Drain Gate Current (continuous)
50
mA
IGS Gate Source Current (continuous)
50
mA
IDM(`) Drain Current (pulsed)
320
A
PTOT Total Dissipation at TC = 25
300
W
Derating Factor
2.0
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
4
kV
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
55 to 175
(`) Pulse width limited by safe operating area


Description

This fully clamped MOSFET STW130NS04ZB is produced by using the latest advanced Company's Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment .Any other application requiring extra ruggedness is also recommended.




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