STW13NB60

MOSFET N-Ch 500 Volt 15 Amp

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STW13NB60 Picture
SeekIC No. : 00165579 Detail

STW13NB60: MOSFET N-Ch 500 Volt 15 Amp

floor Price/Ceiling Price

Part Number:
STW13NB60
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.48 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.48 Ohms


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SWITCH MODE POWER SUPPLIES(SMPS)
 DC-AC CONVERTERS FOR WELDING EQUIPMENTAND
   UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE




Pinout

  Connection Diagram


Specifications

</TABLE
Symbol
Parameter
Value
Unit
STW13NB60
STH13NB60FP
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 kW)
600
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
13
8.6
A
ID
Drain Current (continuos) at TC = 100°C
8.2
5.4
A
IDM ()
Drain Current (pulsed)

52

52
A
PTOT
Total Dissipation at TC = 25°C
190
80
W
  Derating Factor

1.52

0.64

W/°C

dv/dt (1)
Peak Diode Recovery voltage slope
4
4
V/ns
VISO
Insulation Withstand Voltage (DC)
-
2000
V
Tstg
Storage Temperature
65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C



Description

Using the latest high voltage MESH OVERLAY] process, STMicroelectronics STW13NB60 has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




Parameters:

Technical/Catalog InformationSTW13NB60
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C13A
Rds On (Max) @ Id, Vgs540 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds 2600pF @ 25V
Power - Max190W
PackagingTube
Gate Charge (Qg) @ Vgs82nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names STW13NB60
STW13NB60
497 2772 5 ND
49727725ND
497-2772-5



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