Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 600 V
Package / Case
: TO-247
Continuous Drain Current
: 13 A
Resistance Drain-Source RDS (on)
: 550 mOhms
Features: ` TYPICAL RDS(on) = 0.48
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITYApplication· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC
· LIGHTINGSpecifications
| Symbol |
Parameter |
Value |
Unit |
STP13NK60Z
STB13NK60Z/-1
STW13NK60Z |
STP13NK60ZFP |
| VDS |
Drain-source Voltage (VGS = 0) |
600 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
600 |
V |
| VGS |
Gate- source Voltage |
± 30 |
V |
| ID |
Drain Current (continuos) at TC = 25 |
13 |
13(*) |
A |
| ID |
Drain Current (continuos) at TC = 100 |
8.0 |
8.2(*) |
A |
| IDM() |
Drain Current (pulsed) |
52 |
52(*) |
A |
| Ptot |
Total Dissipation at TC = 25 |
1.20 |
35 |
W |
|
Derating Factor |
2.08 |
0.27 |
W/ |
| VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5K) |
4000 |
V |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
| VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
Tj
Tstg |
Operating Junction Temperature
Storage Temperature |
55 to 150 |
|
() Pulse width limited by safe operating area
(1) I
SD 13 A, di/dt
200A/s, V
DD V
(BR)DSS, T
j T
JMAX.
(*) Limited only by maximum temperature allowed
DescriptionThe SuperMESH™ series STW13NK60Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Parameters: | Technical/Catalog Information | STW13NK60Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 13A |
| Rds On (Max) @ Id, Vgs | 550 mOhm @ 4.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2030pF @ 25V |
| Power - Max | 150W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 92nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW13NK60Z
STW13NK60Z
497 3257 5 ND
49732575ND
497-3257-5
|
STW13NK60Z Data Sheet
