STW13NK80Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 12 A
Package / Case : TO-247
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.65 Ohms


Features:

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.

Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·IDEAL FOR OFF-LINE POWER SUPPLIES


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	800	V
VDGR	Drain- gate Voltage (RGS = 20 k)	800	V
VGS	Gate-source Voltage	±30	V
ID	Drain Current (continuous) at Tc = 25	12	A
ID	Drain Current (continuous) at Tc = 100	7.6	A
IDM(.)	Drain Current (pulsed)	48	A
PTOT	Total Dissipation at Tc = 25	230	W
	Derating Factor	1.85	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	6000	V
dv/dt(1)	Peak Diode Recovery voltage slope	4.5	V/ns
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150

(•)Pulse width limited by safe operating area
(1)I_SD 12A, di/dt 200A/µs, V_DD V_(BR)DSS, Tj T_JMAX.
(*)Limited only by maximum temperature allowed


Description

The SuperMESH™ series STW13NK80Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Parameters:

Technical/Catalog Information	STW13NK80Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	650 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	3480pF @ 25V
Power - Max	230W
Packaging	Tube
Gate Charge (Qg) @ Vgs	155nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW13NK80Z STW13NK80Z