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STW13NM50N

MOSFET Ultra Fast Recovery Diode

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SeekIC No. : 00160182 Detail

STW13NM50N: MOSFET Ultra Fast Recovery Diode

STW13NM50N Data Sheet

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Part Number:
STW13NM50N
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.32 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 12 A
Package / Case : TO-247
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.32 Ohms


Parameters:

Technical/Catalog InformationSTW13NM50N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs320 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 960pF @ 50V
Power - Max100W
PackagingTube
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW13NM50N
STW13NM50N
497 7617 5 ND
49776175ND
497-7617-5



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