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STW14NB50

MOSFET N-Ch 500 Volt 14 Amp

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SeekIC No. : 00166825 Detail

STW14NB50: MOSFET N-Ch 500 Volt 14 Amp

STW14NB50 Data Sheet

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Part Number:
STW14NB50
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.45 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.45 Ohms


Application

·SWITCH MODE POWER SUPPLIES (SMPS)
·DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE




Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0)at Tc = 100 500 V
VDGR Drain- gate Voltage (RGS = 20 k)at Tc = 100 500 V
VGS Gate-Source Voltage ± 30 V
ID Drain Current (continuous) at Tc = 25 14 A
ID
Drain Current (continuous) at Tc = 100 		8 A
IDM(`) Drain Current (pulsed) 52 A
Ptot Total Dissipation at Tc = 25 190 W
  Derating Factor 1.51 W/
dv/dt(1) Peak Diode Recovery voltage slope 4 V/ns
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150
(`) Pulse width limited by safe operating area (1) ISD 14 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX


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