STW14NK60Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 13.5 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.5 Ohms


Features:

` TYPICAL R<sub>DS(on)</sub> = 0.45
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY


Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
·  IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC
·  LIGHTING


Specifications

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Symbol	Parameter	Value		Unit
		STP15NK50Z STB15NK50Z STB15NK50Z-1	STP15NK50ZFP
VDS	Drain-source Voltage (VGS = 0)	600		V
VDGR	Drain-gate Voltage (RGS = 20 k)	600		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuos) at TC = 25	13.5	13.5(*)	A
ID	Drain Current (continuos) at TC = 100	8.5	8.5(*)	A
IDM(`)	Drain Current (pulsed)	54	54(*)	A
PTOT	Total Dissipation at TC = 25	160	40	W
	Derating Factor	1.28	0.32	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	4000		V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5		V/ns
VISO	Insulation Withstand Voltage (DC)	--	2500	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150

(`) Pulse width limited by safe operating area
(1) I_SD 13.5A, di/dt 200 A/s, V_DD V_(BR)DSS, T_j T_JMAX.
(*) Limited only by maximum temperature allowed


Description

The STW14NK60Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Parameters:

Technical/Catalog Information	STW14NK60Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	13.5A
Rds On (Max) @ Id, Vgs	500 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	2220pF @ 25V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	75nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW14NK60Z STW14NK60Z