STW14NM50FD

MOSFET N-Ch 500 Volt 12 Amp

product image

STW14NM50FD Picture
SeekIC No. : 00162599 Detail

STW14NM50FD: MOSFET N-Ch 500 Volt 12 Amp

floor Price/Ceiling Price

Part Number:
STW14NM50FD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.4 Ohms


Features:

TYPICAL RDS(on) = 0.32
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS



Application

· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT


Specifications

Symbol Parameter
Value
Unit
TO-220/ D2PAK/I2PAK
TO-220FP
TO-247
VDS Drain-source Voltage (VGS = 0)
500
V
VDGR Drain-gate Voltage (RGS = 20 k)
500
V
VGS Gate- source Voltage
± 30
V
ID Drain Current (continuos) at TC = 25
12
12(*)
14
A
ID Drain Current (continuos) at TC = 100
7.5
7.5(*)
8.8
A
IDM() Drain Current (pulsed)
48
48(*)
56
A
PTOT Total Dissipation at TC = 25
160
35
175
W
Derating Factor
1.28
0.28
1.4
W/
dv/dt (1) Peak Diode Recovery voltage slope
20
V/ns
VISO Insulation Withstand Voltage (DC)
-
2500
-
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
- 65 to 150
- 65 to 150

() Pulse width limited by safe operating area
(1) ISD12A, di/dt 400 A, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed



Description

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. STW14NM50FD is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.




Parameters:

Technical/Catalog InformationSTW14NM50FD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs400 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 1000pF @ 25V
Power - Max160W
PackagingTube
Gate Charge (Qg) @ Vgs12nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW14NM50FD
STW14NM50FD



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Power Supplies - Board Mount
Audio Products
Static Control, ESD, Clean Room Products
Industrial Controls, Meters
Cables, Wires - Management
Undefined Category
View more