MOSFET N-Ch 500 Volt 12 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 14 A | ||
Resistance Drain-Source RDS (on) : | 0.4 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |
Symbol | Parameter |
Value |
Unit | ||
TO-220/ D2PAK/I2PAK |
TO-220FP |
TO-247 | |||
VDS | Drain-source Voltage (VGS = 0) |
500 |
V | ||
VDGR | Drain-gate Voltage (RGS = 20 k) |
500 |
V | ||
VGS | Gate- source Voltage |
± 30 |
V | ||
ID | Drain Current (continuos) at TC = 25 |
12 |
12(*) |
14 |
A |
ID | Drain Current (continuos) at TC = 100 |
7.5 |
7.5(*) |
8.8 |
A |
IDM() | Drain Current (pulsed) |
48 |
48(*) |
56 |
A |
PTOT | Total Dissipation at TC = 25 |
160 |
35 |
175 |
W |
Derating Factor |
1.28 |
0.28 |
1.4 |
W/ | |
dv/dt (1) | Peak Diode Recovery voltage slope |
20 |
V/ns | ||
VISO | Insulation Withstand Voltage (DC) |
- |
2500 |
-
|
V |
Tj Tstg |
Operating Junction Temperature Storage Temperature |
- 65 to 150 - 65 to 150 |
|
The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. STW14NM50FD is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
Technical/Catalog Information | STW14NM50FD |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 14A |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 6A, 10V |
Input Capacitance (Ciss) @ Vds | 1000pF @ 25V |
Power - Max | 160W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 12nC @ 10V |
Package / Case | TO-247-3 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STW14NM50FD STW14NM50FD |