MOSFET TO-247 N-CH 500V
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V |
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 14.6 A |
Resistance Drain-Source RDS (on) : | 0.4 Ohms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | TO-247 |
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWERSUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENT AND
UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
Symbol |
Parameter |
Value |
Unit | |
STH/STW15NA50 |
STH15NA50FI | |||
VDS |
Drain-source Voltage (VGS = 0) |
500 |
V | |
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
500 |
V | |
VGS |
Gate- source Voltage |
±30 |
V | |
ID |
Drain Current (continuos) at TC = 25°C |
14.6 |
9.3 |
A |
ID |
Drain Current (continuos) at TC = 100°C |
9.2 |
5.5 |
A |
IDM () |
Drain Current (pulsed) |
58.4 |
58.4 |
A |
PTOT |
Total Dissipation at TC = 25°C |
190 |
80 |
W |
Derating Factor |
1.52 |
0.64 |
W/°C | |
VISO |
Insulation Withstand Voltage (DC) |
- |
4000 |
V |
Tstg |
Storage Temperature |
65 to 150 |
°C | |
Tj |
Max. Operating Junction Temperature |
150 |
°C |
This series of POWER MOSFETS STW15NA50 represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.