STW15NB50

MOSFET N-Ch 500 Volt 14.6 A

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STW15NB50 Picture
SeekIC No. : 00163835 Detail

STW15NB50: MOSFET N-Ch 500 Volt 14.6 A

floor Price/Ceiling Price

Part Number:
STW15NB50
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 14.6 A
Resistance Drain-Source RDS (on) : 0.36 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.36 Ohms
Continuous Drain Current : 14.6 A


Features:

HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENTAND
   UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE



Specifications

Symbol
Parameter
Value
Unit
STW15NB50
STH15NB50FI
VDS
Drain-source Voltage (VGS = 0)
500
V
VDGR
Drain-gate Voltage (RGS = 20 kW)
500
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
14.6
10.5
A
ID
Drain Current (continuos) at TC = 100°C
9.2
6.6
A
IDM ()
Drain Current (pulsed)

58.4

58.4
A
PTOT
Total Dissipation at TC = 25°C
190
80
W
 

Derating Factor

0.64

1.52

W/°C

dv/dt (1)
Peak Diode Recovery voltage slope
4
V/ns
VISO
Insulation Withstand Voltage (DC)
4000
V
Tstg
Storage Temperature
65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C



Description

Using the latest high voltage MESH OVERLAY] process, SGS-Thomson STW15NB50 has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




Parameters:

Technical/Catalog InformationSTW15NB50
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C14.6A
Rds On (Max) @ Id, Vgs360 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds 3400pF @ 25V
Power - Max190W
PackagingTube
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names STW15NB50
STW15NB50
497 2664 5 ND
49726645ND
497-2664-5



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