STW16NK60Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 420 mOhms
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247
Continuous Drain Current : 14 A


Features:

` TYPICAL RDS(on) = 0.38
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY


Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	600	V
VDGR	Drain-gate Voltage (RGS = 20 k)	600	V
VGS	Gate- source Voltage	± 30	V
ID	Drain Current (continuos) at TC = 25	14	A
ID	Drain Current (continuos) at TC = 100	8.8	A
IDM(`)	Drain Current (pulsed)	6	A
PTOT	Total Dissipation at TC = 25	190	W
	Derating Factor	1.51	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	6000	kV
dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V/ns
Tj Tstg	Operating Junction Temperature Storage Temperature	55 to 150

(`)Pulse width limited by safe operating area
(1) I_SD 14A, di/dt 200 A/s, V_DD V_(BR)/DSS, T_j T_JMAX
(*) Limited only by maximum temperature allowed


Description

The SuperMESH™ series STW16NK60Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Parameters:

Technical/Catalog Information	STW16NK60Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	420 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	2650pF @ 25V
Power - Max	190W
Packaging	Tube
Gate Charge (Qg) @ Vgs	86nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW16NK60Z STW16NK60Z 497 3558 5 ND 49735585ND 497-3558-5