STW18NB40

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.26 Ohms
Drain-Source Breakdown Voltage : 400 V
Continuous Drain Current : 18.4 A


Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDINGE QUIPMENT AND
   UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

Specifications

Symbol	Parameter	Value		Unit
		STW18NB40	STH18NB40FI
VDS	Drain-source Voltage (VGS = 0)	400		V
VDGR	Drain-gate Voltage (RGS = 20 kW)	400		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuos) at TC = 25°C	18.4	12.4	A
ID	Drain Current (continuos) at TC = 100°C	11.6	7.8	A
IDM ()	Drain Current (pulsed)	73.6	73.6	A
PTOT	Total Dissipation at TC = 25°C	190	80	W
	Derating Factor	1.52	0.64	W/°C
dv/dt(1)	Peak Diode Recovery voltage slope	4.5	4.5	V/ns
VISO	Insulation Withstand Voltage (DC)	-	2000	V
Tstg	Storage Temperature	65 to 150		°C
Tj	Max. Operating Junction Temperature	150		°C

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics STW18NB40 has designed an advanced family of power MOSFETswithoutstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.