MOSFET N-Ch 600 Volt 16 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 16 A | ||
Resistance Drain-Source RDS (on) : | 0.36 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |
Symbol | Parameter | Value | Unit |
VDS |
Drain-source Voltage (VGS = 0) |
600 | V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
600 | V |
VGS |
Gate-source Voltage |
±30 | V |
ID |
Drain Current (continuous) at Tc = 25 |
16 | A |
ID |
Drain Current (continuous) at Tc = 100 |
10 | A |
IDM(.) |
Drain Current (pulsed) |
64 | A |
PTOT |
Total Dissipation at Tc = 25 |
230 | W |
Derating Factor |
1.85 | W/ | |
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5K) |
6000 |
V |
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
Tj Tstg |
Operating Junction Temperature |
-55 to 150 |
The SuperMESH™ series STW18NK60Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Technical/Catalog Information | STW18NK60Z |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 16A |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 8A, 10V |
Input Capacitance (Ciss) @ Vds | 3540pF @ 25V |
Power - Max | 230W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 170nC @ 10V |
Package / Case | TO-247-3 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STW18NK60Z STW18NK60Z 497 4422 5 ND 49744225ND 497-4422-5 |