STW18NK60Z

MOSFET N-Ch 600 Volt 16 Amp

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SeekIC No. : 00162644 Detail

STW18NK60Z: MOSFET N-Ch 600 Volt 16 Amp

floor Price/Ceiling Price

Part Number:
STW18NK60Z
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 0.36 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 16 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.36 Ohms


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES



Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

600 V
VDGR

Drain- gate Voltage (RGS = 20 k)

600 V
VGS

Gate-source Voltage

±30 V
ID

Drain Current (continuous) at Tc = 25

16 A
ID

Drain Current (continuous) at Tc = 100

10 A
IDM(.)

Drain Current (pulsed)

64 A
PTOT

Total Dissipation at Tc = 25

230 W

Derating Factor

1.85 W/

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5K)

6000

V

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ns

Tj
Tstg

Operating Junction Temperature
Storage Temperature

-55 to 150
(•)Pulse width limited by safe operating area
(1)ISD 16A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowed



Description

The SuperMESH™ series STW18NK60Z  is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Parameters:

Technical/Catalog InformationSTW18NK60Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs360 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds 3540pF @ 25V
Power - Max230W
PackagingTube
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW18NK60Z
STW18NK60Z
497 4422 5 ND
49744225ND
497-4422-5



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