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STW22NM60

Features: ` TYPICAL RDS(on) = 0.19` HIGH dv/dt AND AVALANCHE CAPABILITIES` 100% AVALANCHE TESTED` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCEApplicationThe MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturiza...

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SeekIC No. : 004509141 Detail

STW22NM60: Features: ` TYPICAL RDS(on) = 0.19` HIGH dv/dt AND AVALANCHE CAPABILITIES` 100% AVALANCHE TESTED` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCEApplicationThe MDmesh™ family ...

STW22NM60 Data Sheet

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Part Number:
STW22NM60
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

`  TYPICAL RDS(on) = 0.19
`  HIGH dv/dt AND AVALANCHE CAPABILITIES
`  100% AVALANCHE TESTED
`  LOW INPUT CAPACITANCE AND GATE CHARGE
`  LOW GATE INPUT RESISTANCE


Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.




Specifications

Symbol Parameter
Value
Unit
STP22NM60
STB22NM60/1
STF22NM60
STW22NM60
VDS Drain-source Voltage (VGS = 0)
600
V
VDGR Drain-gate Voltage (RGS = 20 k)
600
V
VGS Gate- source Voltage
± 30
V
ID Drain Current (continuos) at TC = 25
22
22(*)
22
A
ID Drain Current (continuos) at TC = 100
12.6
12.6(*)
12.6
A
IDM() Drain Current (pulsed)
80
80(*)
80
A
PTOT Total Dissipation at TC = 25
192
45
210
W
Derating Factor
1.2
0.36
1.2
W/
dv/dt (1) Peak Diode Recovery voltage slope
15
V/ns
VISO Insulation Withstand Voltage (DC)
-
2500
-
V
Tstg Storage Temperature
-65 to 150
Tj
 Max. Operating Junction Temperature
150
() Pulse width limited by safe operating area;
(*)Limited only by maximum temperature allowed
(1) ISD22A, di/dt400A/s, VDD V(BR)DSS, Tj TJMAX


Description

This improved version of MDmesh™ STW22NM60 which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall performances that are significantly better than that of similar competition's products.




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