MFG:TO247 Package Cooled:7850 D/C:ST
MFG: TO247
Package Cooled: 7850
D/C: ST
Description: The STP25NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET ...
The STP25NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
| Symbol | Parameter |
Value |
Unit | |
| TO-220/I²PAK TO-247/D²PAK |
TO-220FP | |||
| VDS | Drain-source Voltage (VGS = 0) |
600 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V | |
| VGS | Gate- source Voltage |
±25 |
V | |
| ID | Drain Current (continuos) at TC = 25 |
20 |
20(*) |
A |
| ID | Drain Current (continuos) at TC = 100 |
12.8 |
12.8(*) |
A |
| IDM(1) | Drain Current (pulsed) |
80 |
80(*) |
A |
| PTOT | Total Dissipation at TC = 25 |
160 |
40 |
W |
| Derating Factor |
1.28 |
0.32 |
W/ | |
| dv/dt (2) | Peak Diode Recovery voltage slope |
TBD |
V/ns | |
| Tstg | Storage Temperature |
55 to 150 |
||
| Tj | Max. Operating Junction Temperature |
150 |
||
The MDmesh™ II family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies .
STW25NM60N
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The STW25NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET ssociates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable ...
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