Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Continuous Drain Current
: 20 A
Drain-Source Breakdown Voltage
: 600 V
Package / Case
: TO-247
Gate-Source Breakdown Voltage
: +/- 25 V
Resistance Drain-Source RDS (on)
: 0.14 Ohms
Features: ` WORLD'S LOWEST ON RESISTANCE
` TYPICAL RDS(on) = 0.140
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCEApplicationThe MDmesh™ II family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies .
Specifications
| Symbol |
Parameter |
Value |
Unit |
TO-220/I²PAK
TO-247/D²PAK |
TO-220FP |
| VDS |
Drain-source Voltage (VGS = 0) |
600 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
600 |
V |
| VGS |
Gate- source Voltage |
±25 |
V |
| ID |
Drain Current (continuos) at TC = 25 |
20 |
20(*) |
A |
| ID |
Drain Current (continuos) at TC = 100 |
12.8 |
12.8(*) |
A |
| IDM(1) |
Drain Current (pulsed) |
80 |
80(*) |
A |
| PTOT |
Total Dissipation at TC = 25 |
160 |
40 |
W |
|
Derating Factor |
1.28 |
0.32 |
W/ |
| dv/dt (2) |
Peak Diode Recovery voltage slope |
TBD |
V/ns |
| Tstg |
Storage Temperature |
55 to 150 |
|
| Tj |
Max. Operating Junction Temperature |
150 |
|
(*) Limited only by maximum temperature allowed
(1) Pulse width limited by safe operating area
(2) ISD 20 A, di/dt 400 A/s, VDD =80%V(BR)DSS.DescriptionThe STP25NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
Parameters: | Technical/Catalog Information | STW25NM60N |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 10.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2400pF @ 50V |
| Power - Max | 160W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 84nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW25NM60N
STW25NM60N
497 5025 5 ND
49750255ND
497-5025-5
|
STW25NM60N Data Sheet
