Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 500 V
Gate-Source Breakdown Voltage
: +/- 30 V
Continuous Drain Current
: 30 A
Package / Case
: TO-247
Resistance Drain-Source RDS (on)
: 0.12 Ohms
Features: The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
ApplicationThe MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Specifications
| Symbol |
Parameter |
Value |
Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
500 |
V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
500 |
V |
| VGS |
Gate-Source Voltage |
± 30 |
V |
| ID |
Drain Current (continuous) at Tc = 25 |
30 |
A |
| ID |
Drain Current (continuous) at Tc = 100 |
18.9 |
A |
| IDM(`) |
Drain Current (pulsed) |
120 |
A |
| PTOT |
Total Dissipation at Tc = 25 |
313 |
W |
|
Derating Factor |
2.5 |
W/ |
| VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5K) |
6000 |
V |
| dv/dt(1) |
Peak Diode Recovery voltage slope |
15 |
V/ns |
Tj
Tstg |
Operating Junction Temperature
Storage Temperature |
-55 to 150 |
|
(`) Pulse width limited by safe operating area (1) ISD 14 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
DescriptionThe MDmesh™ STW26NM50 is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip echnique yields overall dynamic performance that is significantly better than that of similar competition's products.
Parameters: | Technical/Catalog Information | STW26NM50 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 13A, 10V |
| Input Capacitance (Ciss) @ Vds | 3000pF @ 25V |
| Power - Max | 313W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 106nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW26NM50
STW26NM50
497 3264 5 ND
49732645ND
497-3264-5
|
STW26NM50 Data Sheet
