Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Continuous Drain Current
: 30 A
Drain-Source Breakdown Voltage
: 600 V
Package / Case
: TO-247
Resistance Drain-Source RDS (on)
: 0.135 Ohms
ApplicationThe MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Specifications
| Symbol |
Parameter |
Value |
Unit |
VDS
|
Drain-source Voltage (VGS = 0) |
600 |
V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
600 |
V |
| VGS |
Gate-source Voltage |
±30 |
V |
| ID |
Drain Current (continuous) at Tc = 25 |
30 |
A |
| ID |
Drain Current (continuous) at Tc = 100 |
18.9 |
A |
| IDM(.) |
Drain Current (pulsed) |
120 |
A |
| PTOT |
Total Dissipation at Tc = 25 |
313 |
W |
|
Derating Factor |
2.5 |
W/ |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5K) |
6000 |
V |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
15 |
V/ns |
Tj
Tstg |
Operating Junction Temperature
Storage Temperature |
-55 to 150 |
|
(•)Pulse width limited by safe operating area
(1)ISD 26A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
DescriptionThe MDmesh™ STW26NM60 is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
Parameters: | Technical/Catalog Information | STW26NM60 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 135 mOhm @ 13A, 10V |
| Input Capacitance (Ciss) @ Vds | 2900pF @ 25V |
| Power - Max | 313W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 102nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW26NM60
STW26NM60
497 3265 5 ND
49732655ND
497-3265-5
|
STW26NM60 Data Sheet
