MFG:ST Package Cooled:TO-247 D/C:05+
MFG: ST
Package Cooled: TO-247
D/C: 05+
Description: The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process ...
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
600 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
600 | V |
| VGS |
Gate-source Voltage |
±30 | V |
| ID |
Drain Current (continuous) at Tc = 25 |
30 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
18.9 | A |
| IDM(.) |
Drain Current (pulsed) |
120 | A |
| PTOT |
Total Dissipation at Tc = 25 |
313 | W |
|
Derating Factor |
2.5 | W/ | |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5K) |
6000 |
V |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
15 |
V/ns |
| Tj Tstg |
Operating Junction Temperature |
-55 to 150 |
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
STW26NM60
PDF/DataSheet Download
The MDmesh™ STW26NM50 is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and exc...
MOSFET N-CH 600V 21A TO-247
The STP25NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield the world's lowest on-resistance and gate charge. It is therefore suitable for th...
The STW25NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET ssociates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable ...
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