Position: Home  > All Categories> Integrated Circuits (ICs) > STW29NK50ZD

STW29NK50ZD

MOSFET N-CHANNEL MOSFET

product image

STW29NK50ZD Picture
See larger image
SeekIC No. : 00161065 Detail

STW29NK50ZD: MOSFET N-CHANNEL MOSFET

STW29NK50ZD Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STW29NK50ZD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/17

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 29 A
Resistance Drain-Source RDS (on) : 0.13 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.13 Ohms
Continuous Drain Current : 29 A


Features:

TYPICAL RDS(on) = 0.11
HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING REPEATIBILITY
FAST INTERNAL RECOVERY TIME


Application

HID BALLAST
ZVS PHASE-SHIFT FULL BRIDGE


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
500
V
VDGR Drain-gate Voltage (RGS = 20 K)
500
V
VGS Gate- source Voltage
± 30
V
ID Drain Current (continuous) at TC = 25°C
28
A
ID Drain Current (continuous) at TC = 100°C
18.27
A
IDM(*) Drain Current (pulsed)
116
A
PTOT Total Dissipation at TC = 25°C
350
W
  Derating Factor
2.77
W/°C
VESD(G-S) Gate source ESD (HBM-C = 100pF, R = 1.5 K)
6000
V
dv/dt (1) Peak Diode Recovery voltage slope
4.5
V/ns
Tstg
Tj		 Storage Temperature
Operating Junction Temperature
-55 to 150
°C



Description

The Fast SuperMesh™ series STW29NK50ZD associates all advantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the "FDmesh™" Advanced Technology.




Parameters:

Technical/Catalog InformationSTW29NK50ZD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C29A
Rds On (Max) @ Id, Vgs130 mOhm @ 14.5A, 10V
Input Capacitance (Ciss) @ Vds 6450pF @ 25V
Power - Max350W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW29NK50ZD
STW29NK50ZD
497 5768 ND
4975768ND
497-5768



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Integrated Circuits (ICs)
TA8435H
1MB12-140
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Prototyping Products
AVT4168
DE1
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Switches
US32DMRJ
HBGQ22P-11ET
View more