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SUB75N03-04

MOSFET 30V 75A 187W

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SeekIC No. : 00165050 Detail

SUB75N03-04: MOSFET 30V 75A 187W

SUB75N03-04 Data Sheet

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Part Number:
SUB75N03-04
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 7 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263-3 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Packaging : Tube
Package / Case : TO-263-3
Resistance Drain-Source RDS (on) : 7 mOhms
Continuous Drain Current : 75 A


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Gate-Source Voltage VGS ±20 V
Continuous Drain Currentd
(TJ = 175)		 TC = 25 ID 75a A
TC = 125 75a
Pulsed Drain Current IDM 250
Continuous Source Current (Diode Conduction) IS 75
Avalanche Current   IAS 75
Avalanche Energy L = 0.1 mH EAS 280 mJ
Repetitive Avalanche Energy L = 0.05 mH EAS 140 mJ
Maximum Power Dissipationb TC = 25 PD 375c W
TA = 25b 3.75
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175
Lead Temperature
(1/16" from case for 10 sec.)		 TO-220AB TL -55 to 175



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