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SUB75N06-12L

MOSFET 60V 75A 142W

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SeekIC No. : 00165819 Detail

SUB75N06-12L: MOSFET 60V 75A 142W

SUB75N06-12L Data Sheet

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Part Number:
SUB75N06-12L
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 7.5 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263-3 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Package / Case : TO-263-3
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 7.5 mOhms


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)

Parameter

 Symbol Limit Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20
Continuous Drain Current
(TJ = 175)		 TC = 25 ID 75 A
TC = 100 53
Pulsed Drain Current IDM 180
Avalanche Current IAR 60
Repetitive Avalanche Energya L = 0.1 mH EAR 180 mJ
Power Dissipation TC = 25 (TO-220AB and TO-263) PD 142b W
TA = 25 (TO-263)c PD

 3.75c

Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175



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