SUD50N02-09P Selling Leads, Price trend , Vishay/Siliconix, SUD50N02-09P DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00166733 Detail

SUD50N02-09P: MOSFET 20V 20A 6.5W

SUD50N02-09P Data Sheet

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Part Number:: SUD50N02-09P
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2025/12/23

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Recent History
What is this?

SUD50N02-04P evaluate
MOSFET 20V 34A 8.3W
SUD50N02-04P-E3 evaluate
US $.5 - .81 / Piece

MOSFET 20V 34A 8.3W
SUD50N02-06 evaluate
MOSFET 20V 30A 100W

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	20 A
Resistance Drain-Source RDS (on) :	9.5 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252-3	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 9.5 mOhms
Package / Case : TO-252-3

Features:

TrenchFET^® Power MOSFET
175 Junction Temperature
PWM Optimized for High Efficiency
100% R_g Tested

Application

High-Side Synchronous Buck DC/DC Conversion
− Desktop
− Server

Specifications

Parameter			Symbol	Limit	Unit
Drain-Source Voltage			V_DS	20	V
Gate-Source Voltage			V_GS	±20
Continuous Drain Current^a	TA = 25		I_D	20	V
	TC= 100			14
Pulsed Drain Currenta			I_DM	100
Continuous Source Current (Diode Conduction)^a			I_S	4.3
Avalanche Current		L = 0 1 mH	I_AS	29
Single Pulse Avalanche Energy			E_AS	42	mJ
Maximum Power Dissipation		TA = 25	P_D	6.5^a	W
		TC = 25		39.5
Operating Junction and Storage Temperature Range			T_J, T_stg	−55 to 175

Description

N-Channel 20-V (D-S) 175C MOSFET SUD50N02-09P

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