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SUM110N04-2m7H

Specifications SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions SimulatedData MeasuredData Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 3.7 V On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 1170 A Drain...

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SeekIC No. : 004509291 Detail

SUM110N04-2m7H: Specifications SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions SimulatedData MeasuredData Unit Static Gate Threshold Voltage VGS(th) VDS = VGS...

SUM110N04-2m7H Data Sheet

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SUM110N04-2m7H
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Specifications

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Simulated
Data		 Measured
Data		 Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 3.7   V
On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 1170   A
Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A 0.0022 0.0022 Ω
VGS = 10 V, ID = 30 A, TJ = 125°C 0.0031
VGS = 10 V, ID = 30A, TJ = 175°C 0.0036
gfs

 VGS = 15V, ID =30 A

 87

 S

Forward Voltagea VSD IS = 85 A, VGS = 0 V 1 1.1 V
Dynamicb
Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 12450 15720 Pf
Output Capacitance Coss 1429 1400
Reverse Transfer Capacitance Crss 786 800
Total Gate Chargec Qg VDS = 30 V, VGS = 10 V, ID = 110 A 262 250 NC
Gate-Source Chargec Qgs 95 95
Gate-Drain Chargec Qgd 57 57
Turn-On Delay Timec td(on) VDD = 30 V, RL = 0.27Ω
ID= 110A, VGEN = 10 V, RG = 2.5 Ω		 43 50 Ns
Rise Timec tr 101 150
Turn-Off Delay Timec td(off) 75 70
Fall Timec tf 43 25



Description

The attached spice model of SUM110N04-2m7H describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance of SUM110N04-2m7H is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network of SUM110N04-2m7H is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the SUM110N04-2m7H.




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