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PinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 75 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 175) TC = 25 ID 110 A TC = 125 63 Pulsed Drain Current IDM 350 Avalanche Current IAR 75 Repetitive Avalanche Energy (...

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SeekIC No. : 004509300 Detail

SUM110N08-10: PinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 75 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 175) TC = 25 ID 110 A TC = 125 ...

SUM110N08-10 Data Sheet

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Part Number:: SUM110N08-10
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2025/12/23

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Recent History
What is this?

SUM110N02-03P evaluate
Features: `TrenchFET® Power MOSFET` 175 Junction Temperature`Optimized for Low-Side Synchronou...
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Specifications SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test C...

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Description

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Connection Diagram

Specifications

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	75	V
Gate-Source Voltage		V_GS	±20
Continuous Drain Current (T_J= 175)	T_C = 25	I_D	110	A
	T_C = 125		63
Pulsed Drain Current		I_DM	350
Avalanche Current		I_AR	75
Repetitive Avalanche Energy (Duty Cycle 1%)	L = 0.1 mH	E_AR	280	mJ
Maximum Power Dissipation	T_C = 25	P_D	200	W
	T_A = 25		3.7
Operating Junction and Storage Temperature Range		T_J, T_stg	55 to 175

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SUM110N08-10

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