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SUP70N04-10

MOSFET 40V 70A 120W

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SeekIC No. : 00165398 Detail

SUP70N04-10: MOSFET 40V 70A 120W

SUP70N04-10 Data Sheet

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Part Number:
SUP70N04-10
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 10 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB-3 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Resistance Drain-Source RDS (on) : 10 mOhms
Package / Case : TO-220AB-3
Continuous Drain Current : 70 A


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 175) TC = 25 ID 70 A
TC = 125 47
Pulsed Drain Current IDM 140
Avalanche Current IAR 60
Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH EAR 180 mJ
Maximum Power Dissipation TC = 25 PD 107 W
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 175



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