Series: -
Manufacturer: RFMD
Voltage - Supply: 5V
Packaging: Tape & Reel (TR)
Noise Figure: 6dB
Package / Case: TO-243AA
Test Frequency: 2.14GHz
Frequency: 400MHz ~ 2.5GHz
P1dB: 24dBm (251.2mW) ~ 25dBm (316.2mW)
Gain: 12.5dB ~ 15dB
RF Type: Cellular, W-CDMA, PCS, WLL, WLAN
Current - Supply: 90mA ~122 mA
Features: • On-chip Active Bias Control, Single 5V Supply
• High Output 3rd Order Intercept: +42 to +44 dBm typ.
• High P1dB : +25 dBm typ.
• High Gain: +19 dB at 850 MHz
• High Efficiency: consumes only 600 mW
• Patented High Reliability GaAs HBT Technology
• Surface-Mountable Power Plastic Package
Application• W-CDMA, PCS, Cellular Systems
• High Linearity IF Amplifiers
• Multi-Carrier ApplicationsSpecifications
| Parameter |
Absolute Limit |
| Max. Supply Current (ID ) |
240mA |
| Max. Device Voltage (VCC) |
6.0 V |
| Max. Power Dissipation |
1500mW |
| Max. RF Input Power |
100mW |
| Max. Junction Temp. (TJ) |
+165°C |
| Operating Lead Temp. (TL) |
-40°C to +85°C |
| Max. Storage Temp. |
+150°C |
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVCC (max) < (TJ - TL )/Rht ,j-l |
DescriptionSirenza Microdevices' SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
The SXA-389 is specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-CDMA applications.
Its high linearity makes SXA-389 an ideal choice for multi-carrier as well as digital applications.
SXA-389 Data Sheet
.JPG)
