MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V
Si2323DS-T1-GE3: MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 3.7 A | ||
Resistance Drain-Source RDS (on) : | 0.039 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-236-3 | Packaging : | Reel |