Features: ` TrenchFET@ Power MOSFETApplication· Level Shift· Load SwitchPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 sec. Steady State 10 sec. Steady State Drain-Source Voltage VDS 30 30 8 8 V Gate-Source Voltage VGS ±20 ±20 ±8 ±8 V Continuo...
Si4505DY: Features: ` TrenchFET@ Power MOSFETApplication· Level Shift· Load SwitchPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 sec. Steady State 10 sec. Steady State Dra...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

| Parameter | Symbol | N-Channel | P-Channel | Unit | ||
| 10 sec. | Steady State | 10 sec. | Steady State | |||
| Drain-Source Voltage | VDS | 30 | 30 | 8 | 8 | V |
| Gate-Source Voltage | VGS | ±20 | ±20 | ±8 | ±8 | V |
| Continuous Drain Current (TJ = 150C)a, b TA = 25 TA = 70 |
ID | 7.8 6.0 |
6.0 5.2 |
5.0 3.6 |
3.8 3.0 |
A |
| Pulsed Drain Current | IDM | 30 | 30 | 30 | 30 | A |
| Continuous Source Current (Diode Conduction)a, b | IS | 1.8 | 1.0 | 1.8 | 1.0 | A |
| Maximum Power Dissipationa, b TA = 25 TA = 70 |
PD | 2 1.3 |
1.20 0.75 |
2 1.3 |
1.20 0.75 |
W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 150 | ||||