SI4559EY

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 4.5 A, 3.1 A
Resistance Drain-Source RDS (on) : 55 mOhms, 120 mOhms


Pinout




Specifications

Parameter		Symbol	N-Channel	P-Channel	Unit
Drain-Source Voltage		VDS	60	-60	V
Gate-Source Voltage		VGS	±20	±20
Continuous Drain Current (TJ = 150°C)a	TA = 25°C	ID	±4.5	±3.1	A
	TA = 70°C		±3.8	±2.6
Pulsed Drain Current(10 s Pulse Width)		IDM	±30	±30
Continuous Source Current (Diode Conduction)a		IS	2.0	-2.0
Maximum Power Dissipationa	TA = 25°C	PD	2.4		W
	TA = 70°C		1.7
Operating Junction and Storage Temperature Range		TJ, Tstg	−55 to 150		°C