Si4804BDY

Specifications Parameter Symbol Si4804BDY Si4804DY Unit Drain-Source Voltage VDS 30 30 v Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current TA=25 ID 7.5 7.5 A TA=70 6 6 Continuous Drain Current IDM 30 20 Continuous Source Current (MOSFET Diode...

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SeekIC No. : 004490348 Detail

Si4804BDY: Specifications Parameter Symbol Si4804BDY Si4804DY Unit Drain-Source Voltage VDS 30 30 v Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current TA=25 ID 7.5 7.5 ...

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Part Number:
Si4804BDY
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Specifications

Parameter Symbol Si4804BDY Si4804DY Unit
Drain-Source Voltage
VDS 30 30 v
Gate-Source Voltage VGS ±20 ±20
Continuous Drain Current TA=25
ID 7.5 7.5 A
TA=70 6 6
Continuous Drain Current
IDM 30 20
Continuous Source Current (MOSFET Diode Conduction) IS 2.3 1.7
Power Dissipation
TA=25 PD 1.7 1.7 W
TA=70 2.0 2.0
Operating Junction and Storage Temperature Range TjandTstg −55 to150 −55 to 150
Maximum Junction-to-Ambient RthJA 62.5 62.5 /W





Description

Dual N-Channel 30-V (D-S) MOSFET Si4804BDY
 



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