Specifications Parameter Symbol Si4804BDY Si4804DY Unit Drain-Source Voltage VDS 30 30 v Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current TA=25 ID 7.5 7.5 A TA=70 6 6 Continuous Drain Current IDM 30 20 Continuous Source Current (MOSFET Diode...
Si4804BDY: Specifications Parameter Symbol Si4804BDY Si4804DY Unit Drain-Source Voltage VDS 30 30 v Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current TA=25 ID 7.5 7.5 ...
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| Parameter | Symbol | Si4804BDY | Si4804DY | Unit | |
| Drain-Source Voltage |
VDS | 30 | 30 | v | |
| Gate-Source Voltage | VGS | ±20 | ±20 | ||
| Continuous Drain Current | TA=25 |
ID | 7.5 | 7.5 | A |
| TA=70 | 6 | 6 | |||
| Continuous Drain Current |
IDM | 30 | 20 | ||
| Continuous Source Current (MOSFET Diode Conduction) | IS | 2.3 | 1.7 | ||
| Power Dissipation |
TA=25 | PD | 1.7 | 1.7 | W |
| TA=70 | 2.0 | 2.0 | |||
| Operating Junction and Storage Temperature Range | TjandTstg | −55 to150 | −55 to 150 | ||
| Maximum Junction-to-Ambient | RthJA | 62.5 | 62.5 | /W | |