SI4807DY

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 6 A, 0.9 A
Resistance Drain-Source RDS (on) : 35 mOhms, 1.3 Ohms


Pinout




Specifications

Parameter		Symbol	Gate 1	Gate 2	Unit
Drain-Source Voltage		VDS	-30		V
Gate-Source Voltage		VGS	±20
Continuous Drain Current (TJ = 150)a	TA = 25	ID	±6	±0.9	A
	TA = 70		±4.8	±0.7
Pulsed Drain Current		IDM	±30	±1.5
Continuous Source Current (Diode Conduction)a		IS	-1.25
Maximum Power Dissipationaa	TA = 25	PD	2.3		W
	TA = 70		1.0
Operating Junction and Storage Temperature Range		TJ, Tstg	55 to 150