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Si4810BDY

Features: ·TrenchFET® Power MOSFETS·Fast Switching Speed· Low Gate ChargeApplication· DC-DC Logic Level·Low Voltage and Battery Powered ApplicationsPinoutSpecifications Parameter Symbol 10 sec Steady State Unit Drain-Source Voltage (MOSFET) VDS 30 V Reverse Voltage (Schottk...

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SeekIC No. : 004490350 Detail

Si4810BDY: Features: ·TrenchFET® Power MOSFETS·Fast Switching Speed· Low Gate ChargeApplication· DC-DC Logic Level·Low Voltage and Battery Powered ApplicationsPinoutSpecifications Parameter Symbol ...

Si4810BDY Data Sheet

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Part Number:
Si4810BDY
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

·TrenchFET® Power MOSFETS
·Fast Switching Speed
· Low Gate Charge


Application

· DC-DC Logic Level
·Low Voltage and Battery Powered Applications


Pinout

Connection Diagram


Specifications

Parameter   Symbol 10 sec Steady State Unit
Drain-Source Voltage (MOSFET) VDS 30 V
Reverse Voltage (Schottky) 30
Gate-Source Voltage (MOSFET) VGS ±20
Continuous Drain Current (TJ = 150 ) (MOSFET)a TA = 25 ID 10 7.5 A
TA = 70 8 6
Pulsed Drain Current (MOSFET)   IDM 50
Continuous Source Current (MOSFET Diode Conduction)a   IS 2.3 1.25
Average Foward Current (Schottky) IF 3.8 2.4
Pulsed Foward Current (Schottky) IFM 40
Maximum Power Dissipation (MOSFET)a TA = 25 PD 2.5 1.38 W
TA = 70 1.6 0.88
Maximum Power Dissipation (Schottky)a TA = 25 2.0 1.31
TA = 70 1.3 0.84
Operating Junction and Storage Temperature Range   TJ, Tstg -55 to 150



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