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SI4810DY

MOSFET 30V 10A 2.5W

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SeekIC No. : 00165106 Detail

SI4810DY: MOSFET 30V 10A 2.5W

SI4810DY Data Sheet

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Part Number:
SI4810DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 13.5 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 10 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 13.5 mOhms


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage (MOSFET) VDS 30 V
Reverse Voltage (Schottky) 30
Gate-Source Voltage (MOSFET) VGS ±20
Continuous Drain Current (TJ = 150) (MOSFET)a, b TA = 25 ID 10 A
TA = 70 8
Pulsed Drain Current (MOSFET)   IDM 50
Continuous Source Current (MOSFET Diode Conduction)a, b   IS 2.3
Average Foward Current (Schottky) IF 4.0
Pulsed Foward Current (Schottky) IFM 50
Maximum Power Dissipation (MOSFET)a, b TA = 25 PD 2.5 W
TA = 70 1.6
Maximum Power Dissipation (Schottky)a, b TA = 25 2.0
TA = 70 1.3
Operating Junction and Storage Temperature Range   TJ, Tstg -55 to 150



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