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SI4812DY

MOSFET 30V 9A 2.5W

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SeekIC No. : 00166649 Detail

SI4812DY: MOSFET 30V 9A 2.5W

SI4812DY Data Sheet

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Part Number:
SI4812DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6.9 A
Resistance Drain-Source RDS (on) : 18 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 18 mOhms
Continuous Drain Current : 6.9 A


Features:

· LITTLE FOOT® Plus Power MOSFET
·100% Rg Tested


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
10 sec Steady State
Drain-Source Voltage (MOSFET) VDS 30 V
Reverse Voltage (Schottky) 30
Gate-Source Voltage (MOSFET) VGS ±20
Continuous Drain Current (TJ = 150) (MOSFET)a, b TA = 25 ID 9 6.9 A
TA = 70 7.5 5.6
Pulsed Drain Current (MOSFET)   IDM 50
Continuous Source Current (MOSFET Diode Conduction)a, b   IS 2.1 1.2
Average Foward Current (Schottky) IF 1.4 0.8
Pulsed Foward Current (Schottky) IFM 30
Maximum Power Dissipation (MOSFET)a, b TA = 25 PD 2.5 1.4 W
TA = 70 1.6 0.9
Maximum Power Dissipation (Schottky)a, b TA = 25 2.0 1.2
TA = 70 1.3 0.8
Operating Junction and Storage Temperature Range   TJ, Tstg -55 to 150



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