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SI4816DY

MOSFET 30V 6.3/10A

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SeekIC No. : 00166844 Detail

SI4816DY: MOSFET 30V 6.3/10A

SI4816DY Data Sheet

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Part Number:
SI4816DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 5.3 A, 7.7 A
Resistance Drain-Source RDS (on) : 22 mOhms, 13 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 20 V
Configuration : Dual
Continuous Drain Current : 5.3 A, 7.7 A
Resistance Drain-Source RDS (on) : 22 mOhms, 13 mOhms


Features:

· LITTLE FOOT® Plus Power MOSFET
·100% Rg Tested


Pinout

Connection Diagram


Specifications

Parameter Symbol Channel-1 Channel-2 Unit
10 secs Steady State 10 secs Steady State
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20
Continuous Drain Current (TJ = 150)a TA = 25 ID 6.3 5.3 10 7.7 A
TA = 70 5.4 4.2 8.2 6.2
Pulsed Drain Current IDM 30 40
Continuous Source Current (Diode Conduction)a IS 1.3 0.9 2.2 1.15
Avalanche Currentb L = 0 1 mH IAS 12 25
Single Pulse Avalanche Energyb EAS 7.2 31.25 mJ
Maximum Power Dissipationa TA = 25 PD 1.4 1.0 2.4 1.25 W
TA = 70 0.9 0.64 1.5 0.8
Operating Junction and Storage Temperature Range TJ, Tstg --55 to 150



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