SI4822DY

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.008 Ohms
Continuous Drain Current : 12.5 A


Features:

· 12.5 A, 30 V. RDS(ON) = 0.0095 W @ VGS = 10 V
· RDS(ON) = 0.013 W @ VGS = 4.5 V.
· Fast switching speed.
· Low gate charge.
· High performance trench technology for
· extremely low RDS(ON).
· High power and current handling capability.


Pinout




Specifications

Symbol	Parameter	Si4822DY	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	12.5	A
		50
PD	Power Dissipation for Dual Operation	2.5	W
	Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c)	1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C
THERMAL CHARACTERISTICS
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	5	°C/W
RJC	Thermal Resistance, Junction-to-Case (Note 1)	25	°C/W

Description

This N-Channel Logic Level MOSFET Si4822DY is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
t he on-state resistance and yet maintain superior switching performance.

These devices of the Si4822DY are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.